Study on high - temperature piezoresistive pressure sensors based on silicon on insulator 絕緣體上硅高溫壓力傳感器研究
The appearance of soi ( silicon on insulator ) technology has changed this situation 為了使器件能在惡劣的條件下仍能正常工作。
The first rs64 to use ibm copper and soi silicon on insulator , now with six processor cards scaling up to 24 - way smp 第一個(gè)使用ibm的銅和絕緣硅技術(shù)的rs64芯片,現(xiàn)在可以支持6個(gè)處理器卡,可以擴(kuò)展為24路的smp機(jī)器。
Soi , namely silicon on insulator , device and ic have many advantages : low leak current , weak parasitic capacitance , low power loss , radiation hardness , and high integreted level Soi ( silicononinsulator )器件及集成電路具有泄漏電流小、寄生電容小、功耗小、集成度高、抗輻射能力強(qiáng)等優(yōu)點(diǎn)。
Soi hvic ( silicon on insulator high voltage integrated circuit ) is the mainstream and trend of the power integrated circuit ( pic ) due to the improved no latch - up , reduced leakage current , perfect irradiation hardness , and improved insulation Soi ( silicononinsulator )高壓集成電路具有無閂鎖、漏電流小、抗輻射、隔離性能好等優(yōu)點(diǎn),已成為功率集成電路( powerintegratedcircuit )的重要發(fā)展方向。
As the development of soi ( silicon on insulator ) preparation technology and the decrease of soi material ’ s cost , it provides a wider space for the exploitation of high - performance hvic based on the flexibility material structure and the complete dielectric isolation technology 隨著soi ( silicon - on - insulator )材料制備技術(shù)的日益成熟和成本的降低, soi技術(shù)以其獨(dú)特的材料結(jié)構(gòu)和全介質(zhì)隔離技術(shù)為高性能soi基hvic的開發(fā)提供了廣闊的空間。
Strained - soi mosfet , which appears recently , takes both the advantages of soi ( silicon on insulator ) and sige ( silicon germanium ) . it has shown advantages over bulk sample in enhanced carriers mobility , as well as higher transconductance , stronger drive capability and reduced parasitic capacitances . these properties make it a promising candidate for improving the performance of microelectronics devices Strained - soimosfet是最近幾年才出現(xiàn)的新型器件,它將soi材料和sige材料結(jié)合在一起,與傳統(tǒng)體硅器件相比,表現(xiàn)出載流子遷移率高、電流驅(qū)動(dòng)能力強(qiáng)、跨導(dǎo)大、寄生效應(yīng)小等優(yōu)勢,特別適用于高性能、高速度、低功耗超大規(guī)模集成電路。
Silicon on insulator ( soi ) technology was originally invented for the niche of radiation - hard circuits . high speed , low voltage and radiation - hardness are mam three advantages presented by soi over bulk . since the cost to produce soi materials was high in the past , the application of soi materials was limited in military industry and aerospace 在這一部分中,重點(diǎn)總結(jié)了soi技術(shù)相對(duì)于傳統(tǒng)的體硅技術(shù)來說的優(yōu)越性, soi材料制備的方法流程, soi新型器件的特性和工藝,以及soi技術(shù)在抗輻照、耐高溫、高速、低功耗、低壓等領(lǐng)域內(nèi)的應(yīng)用及進(jìn)展。
其他語種釋義
silicon on insulatorとは意味:シリコン?オン?インシュレータ◆【略】SOI◆チップ上のトランジスタ層とシリコン層の間に絶縁層を配置する技術(shù) -------------------------------------------------------------------------------- {名?形} : <→SILICON-ON-INSULATOR>